Document
FAQ
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What Are The Reasons And Solutions For Short Circuit Burnout Of MOS?
1. The Carrying Capacity Of MOSFET Is Insufficient. Change The Specification Sheet Of MOSFET To Increase The Instantaneous Load Carrying Capacity.
2. The MOSFET Has A Longer Turn Off Time, Causing It To Operate In The Amplification Region For A Longer Period Of Time; Reducing The Turn Off Time Of MOSFET During Turn Off Is Generally Achieved By Increasing The Acceleration Discharge Circuit
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Why Is It Not Recommended To Use Parallel Capacitors To Increase ESD For ID/NTC Resistors?
Because Some Systems Have A Short Time To Recognize The Impedance Of ID Or NTC, The Parallel Connection Of Capacitors May Result In The Impedance Of ID/NTC Not Being Within The Range Due To The Voltage Applied To Charge The Capacitors. So Generally, ESD Tubes Are Parallel Connected To ID And NTC To Improve ED Capability
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How To Improve The ESD Capability Of PCBA?
Directly Prevent 100nF Capacitors And ESD Discharge Points At The Positive And Negative Poles Of Input And Output. Parallel ESD Tubes On NTC And Other Detection Devices
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How To Improve The Accuracy Of Current Detection And Anti-interference Ability?
The Detection Line For Current Detection Needs To Use The Kelvin Connection Method. The Detection Line Should Use An Equal Length Wire, And Impedance Matching Should Be Done If Possible. Connect Capacitors Of 10-100nF Directly To GND On Each Of The Two Wires, And Use Capacitors Of 1-100nF Between The Connecting Wires
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